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JHD164A 121002 TDA3606A LF05A08 1H472J FAN3223 PD001 B550B
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S27KL0641DABHI023 - HyperRAM?Self-Refresh DRAM 3.0V/1.8V 64 Mb (8 MB)    HyperRAM?Self-Refresh DRAM 3.0V/1.8V 64 Mb (8 MB)

S27KL0641DABHI023_8477442.PDF Datasheet


 Full text search : HyperRAM?Self-Refresh DRAM 3.0V/1.8V 64 Mb (8 MB)    HyperRAM?Self-Refresh DRAM 3.0V/1.8V 64 Mb (8 MB)


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PART Description Maker
HM5116405S-5 HM5116405S-6 HM5116405S-7 HM5117405TS 16M EDO DRAM (4-MWORD X 4-BIT) 4K REFRESH / 2K REFRESH
HITACHI[Hitachi Semiconductor]
HM51W18165J-5 HM51W18165J-6 HM51W18165J-7 HM51W181 16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh
Hitachi Semiconductor
KMM372F3200BK3 KMM372F3280BK3 KMM372F400CK KMM372F 32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
4M x 72 DRAM DIMM with ECC using 4Mx4, 4K 2K Refresh, 3.3V
Samsung Electronic
Samsung semiconductor
KMM372C1680BK KMM372C1600BK KMM372C1600BS KMM372C1 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
SAMSUNG SEMICONDUCTOR CO. LTD.
KMM372C1600BK KMM372C1600BS KMM372C1680BK KMM372C1 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K 8K Refresh 5V
Samsung Electronic
Samsung semiconductor
HM5164165FTT-5 HM5165165FTT-5 HM5164165FTT-6 HM516 64M EDO DRAM (4-Mword × 16-bit) 8k refresh/4k refresh
64M EDO DRAM (4-Mword 隆驴 16-bit) 8k refresh/4k refresh
Elpida Memory
HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY 256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
KMM5324004BSWG KMM5324004BSW 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM5328004BSWG KMM5328004BSW 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
KMM5328004CSWG KMM5328004CSW 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
SAMSUNG[Samsung semiconductor]
HM5116100S HM5116100 HM5116100S-6 HM5116100S-7 16M FP DRAM (16-Mword x 1-bit) 4k Refresh
Hitachi Semiconductor
 
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